| PART |
Description |
Maker |
| M54580P |
7 UNIT 150MA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M54562 M54562FP M54562P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M54562FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE
|
Mitsubishi Electric Semiconductor
|
| M54563P12 M54563FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
0.35 A 8 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO20
|
Mitsubishi Electric Semiconductor
|
| M54528P |
7- UNIT 150MA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| L10366-10 L10366-11 L10366-12 |
HIGH BRIGHTNESS VUV LIGHT SOURCE UNIT
|
Hamamatsu Corporation
|
| AAT3221IJS-18-T1 AAT3221IJS-24-T1 AAT3221IJS-30-T1 |
150mA NanoPower??LDO Linear Regulator
Hex Buffers / Drivers with Open-Collector High-Vltage Outputs 14-SO 0 to 70 150mA的NanoPower⑩LDO线性稳压器
128 x 128 pixel format, LED or EL Backlight available 150mA的NanoPower⑩LDO线性稳压器
150mA NanoPowerLDO Linear Regulator 150mA的NanoPower⑩LDO线性稳压器
POT 10K OHM SLIDE 100MM MONO FAD
150mA NanoPower?/a> LDO Linear Regulator
150mA NanoPower LDO Linear Regulator
150mA NanoPower⑩ LDO Linear Regulator
150MA NANOPOWER⒙ LDO LINEAR REGULATOR
|
Advanced Analogic Technologies, Inc.
ANALOGICTECH[Advanced Analogic Technologies]
|
| LT1541MN |
Dot Matrix LED Unit for Outdoor Use(Lamp Type,Water-proof Type)
|
Sharp Electrionic Components
|
| P3-1A1600 P3-1A16 |
Outside Dimension:Unit P3-1A1600 外形尺寸：单位的P3 - 1A1600
Proximity Sensors, Reed Sensor-P Type
Outside Dimension:Unit P3-1A1600
|
COSMO Electronics Corporation
COSMO[COSMO Electronics Corporation]
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| PAA150F PAA150F-12 PAA150F-15 PAA150F-24 PAA150F-3 |
Unit type
|
RSG Electronic Components GmbH
|
